Mohamed Benyoucef - Research Information System | University of Kassel - CONVERIS Research Information System

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Prof. Dr. Mohamed Benyoucef

Projects as Principal Investigator

08/2021 - 07/2024	QR.X
01/2019 - 08/2022	DFG-Development of deterministic quantum-light sources from InP-based quantum dots in the telecom c-band”
2019 - 2022	LOEWE-Scalable Molecular Quantum Bits (SMolBits)
10/2018 - 12/2023	Scalable Molecular Quantum Bits (SMolBits)
2018 - 2021	Q.Link.Extension
05/2014 - 04/2018	BMBF-Quantenkommunikation (Q.com)
2010 - 2013	BMBF-InP basierte Quantenpunktstrukturen und NV-Zentren in nanokristallinen Diamantstrukturen für die optische Quantenkommunikation (QuaHL-Rep)

Publications

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2016
2016
2016
2015
2015
2015	Usman, M., Reithmaier, J.P., Benyoucef, M., 2015. Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates. Physica Status Solidi (A) 2015, 443. https://doi.org/10.1002/pssa.201431459
2014	Yacob, M., Reithmaier, J.P., Benyoucef, M., 2014. Low-density InP-based quantum dots emitting around the 1.5 mu m telecom wavelength range. Applied Physics Letters 104, 022113. https://doi.org/10.1063/1.4861940
2014	Benyoucef, M., Alzoubi, T., Reithmaier, J.P., Wu, M., Trampert, A., 2014. Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon. physica status solidi (a) – applications and materials science 211, 817–822. https://doi.org/10.1002/pssa.201330395
2013	Benyoucef, M., Usman, M., Reithmaier, J.P., 2013. Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates. Applied Physics Letters 102, 132101. https://doi.org/10.1063/1.4799149
2013	Benyoucef, M., Reithmaier, J.P., 2013. Direct growth of III-V quantum dots on silicon substrates: structural and optical properties. Semiconductor Science and Technology 28, 094004. https://doi.org/10.1088/0268-1242/28/9/094004