Aufsatz in einer Fachzeitschrift
Low-density InP-based quantum dots emitting around the 1.5 mu m telecom wavelength range
Details zur Publikation
Autor(inn)en: | Yacob, M.; Reithmaier, J.; Benyoucef, M. |
Verlag: | AMER INST PHYSICS |
Publikationsjahr: | 2014 |
Zeitschrift: | Applied Physics Letters |
Seitenbereich: | 022113 |
Abkürzung der Fachzeitschrift: | Appl. Phys. Lett. |
Jahrgang/Band : | 104 |
Seitenumfang: | 4 |
ISSN: | 0003-6951 |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 x 10(8) cm(-2) are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 mu m with narrow excitonic linewidth below 50 mu eV, which can be used as single photon source in the telecom wavelength range. (C) 2014 AIP Publishing LLC.
The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 x 10(8) cm(-2) are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 mu m with narrow excitonic linewidth below 50 mu eV, which can be used as single photon source in the telecom wavelength range. (C) 2014 AIP Publishing LLC.
