Aufsatz in einer Fachzeitschrift
Photoinduced magnetoresistance in organic field-effect transistors
Details zur Publikation
Autor(inn)en: | Reichert, T.; Saragi, T. |
Publikationsjahr: | 2011 |
Zeitschrift: | Applied Physics Letters |
Seitenbereich: | 063307/1-063307/3 |
Abkürzung der Fachzeitschrift: | Appl. Phys. Lett. |
Jahrgang/Band : | 98 |
ISSN: | 0003-6951 |
Zusammenfassung, Abstract
We report on negative magnetoresistance MR of 0.46% in low external magnetic fields inpentacene field-effect transistors. This effect can only be observed if the device is irradiated. MRstrongly depends on gate voltage but is independent of drain voltage. Furthermore, the MR increasesas the intensity of irradiation increases and the relationship of both parameters is not linear. Thedependency of MR on magnetic field is not linear either, but it follows non-Lorentzian line shape.The triplet exciton-charge reaction model is a possible explanation for negative MR in irradiatedpentacene field-effect transistors. © 2011 American Institute of Physics.
We report on negative magnetoresistance MR of 0.46% in low external magnetic fields inpentacene field-effect transistors. This effect can only be observed if the device is irradiated. MRstrongly depends on gate voltage but is independent of drain voltage. Furthermore, the MR increasesas the intensity of irradiation increases and the relationship of both parameters is not linear. Thedependency of MR on magnetic field is not linear either, but it follows non-Lorentzian line shape.The triplet exciton-charge reaction model is a possible explanation for negative MR in irradiatedpentacene field-effect transistors. © 2011 American Institute of Physics.
