Aufsatz in einer Fachzeitschrift
Thermal exchange bias field drifts after 10 keV He ion bombardment: Storage temperature dependence and initial number of coupling sites
Details zur Publikation
Autor(inn)en: | Schmidt, C.; Weis, T.; Engel, D.; Ehresmann, A. |
Publikationsjahr: | 2011 |
Zeitschrift: | Journal of Applied Physics |
Seitenbereich: | 113911 |
Jahrgang/Band : | 110 |
ISSN: | 0021-8979 |
DOI-Link der Erstveröffentlichung: |
URN / URL: |
Zusammenfassung, Abstract
Sputter deposited Mn83Ir17(30 nm)/Co70Fe30(10 nm)/Ta thin films have been investigated for their thermal exchange bias field drift at different storage temperatures after 10 keV He+ ion bombardment in an externally applied in-plane magnetic field. It is experimentally shown that the drift coefficient in an intermediate time interval, as given in a recently developed model, is proportional to T and proportional to the initial number of coupling sites in the polycrystallineexchange bias layer system used.
Sputter deposited Mn83Ir17(30 nm)/Co70Fe30(10 nm)/Ta thin films have been investigated for their thermal exchange bias field drift at different storage temperatures after 10 keV He+ ion bombardment in an externally applied in-plane magnetic field. It is experimentally shown that the drift coefficient in an intermediate time interval, as given in a recently developed model, is proportional to T and proportional to the initial number of coupling sites in the polycrystallineexchange bias layer system used.
