Journal article
Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment
Publication Details
Authors: | Huckfeldt, H.; Gaul, A.; Müglich, N.; Holzinger, D.; Nissen, D.; Albrecht, M.; Emmrich, D.; Beyer, A.; Gölzhäuser, A.; Ehresmann, A. |
Publication year: | 2017 |
Journal: | Journal of Physics: Condensed Matter |
Pages range : | 125801 |
Volume number: | 29 |
ISSN: | 0953-8984 |
DOI-Link der Erstveröffentlichung: |
Languages: | English |
The magnetic modification of exchange bias materials by ‘ion bombardment induced magnetic
patterning’ has been established more than a decade ago. To understand these experimental
findings several theoretical models were introduced. Few investigations, however, did focus on
magnetic property modifications caused by effects of ion bombardment in the ferromagnetic
layer. In the present study, the structural changes occurring under ion bombardment were
investigated by Monte-Carlo simulations and in experiments. A strong reduction of the
saturation magnetization scaling linearly with increasing ion doses is observed and our
findings suggest that it is correlated to the swelling of the layer material based on helium
implantation and vacancy creation.
Keywords
exchange bias, ion bombardment, saturation magnetization, SRIM, thin films