Journal article
High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds
Publication Details
Authors: | Saragi, T.; Fuhrmann-Lieker, T.; Salbeck, J. |
Publication year: | 2005 |
Journal: | Synthetic Metals |
Pages range : | 267-270 |
Volume number: | 148 |
Start page: | 267 |
End page: | 270 |
ISSN: | 0379-6779 |
DOI-Link der Erstveröffentlichung: |
Abstract
We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2',7,7'-tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD) and 2,2',7,7'-tetrakis-(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7 x 10(-5) cm(2)/Vs. We obtained ON/OFF ratios up to 3.6 x 10(6) with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months. (C) 2004 Elsevier B.V. All rights reserved.
We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2',7,7'-tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD) and 2,2',7,7'-tetrakis-(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7 x 10(-5) cm(2)/Vs. We obtained ON/OFF ratios up to 3.6 x 10(6) with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months. (C) 2004 Elsevier B.V. All rights reserved.
