Aufsatz in einer Fachzeitschrift
Magnetoresistive field-effect transistors based on organic donor/acceptor blends
Details zur Publikation
Autor(inn)en: | Reichert, T.; Saragi, T.; Salbeck, J. |
Publikationsjahr: | 2012 |
Zeitschrift: | RSC Advances |
Seitenbereich: | 7388-7390 |
Jahrgang/Band : | 2 |
ISSN: | 2046-2069 |
Zusammenfassung, Abstract
We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2',7,7'-tetrakis-(N,N-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states.These states are responsible for the magnetoresistance effect in Spiro-TTB-HAT-CN blends.
We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2',7,7'-tetrakis-(N,N-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states.These states are responsible for the magnetoresistance effect in Spiro-TTB-HAT-CN blends.
