Aufsatz in einer Fachzeitschrift
Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon
Details zur Publikation
Autor(inn)en: | Benyoucef, M.; Alzoubi, T.; Reithmaier, J.; Wu, M.; Trampert, A. |
Verlag: | WILEY-V C H VERLAG GMBH |
Publikationsjahr: | 2014 |
Zeitschrift: | physica status solidi (a) – applications and materials science |
Seitenbereich: | 817-822 |
Jahrgang/Band : | 211 |
Erste Seite: | 817 |
Letzte Seite: | 822 |
Seitenumfang: | 6 |
ISSN: | 1862-6300 |
eISSN: | 1862-6319 |
DOI-Link der Erstveröffentlichung: |
Zusammenfassung, Abstract
InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon.
InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect-free silicon matrix after a multi-step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high-resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect-free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III-V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect-free silicon.
Schlagwörter
III-V semiconductors, molecular beam epitaxy, quantum dots, silicon substrates, transmission electron microscopy
